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Product Detailed Parameters
- Description：MOSFET N-CH 80V 39A LFPAK56
- Series：TrenchMOS™
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：39A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：25mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：25.9 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1800 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：95W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK56, Power-SO8
- Package / Case：SC-100, SOT-669
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Overview
The BUK7Y25-80E/CX is a single N-channel enhancement mode MOSFET manufactured by Nexperia, distributed by NXP USA Inc. It utilizes Silicon technology and is housed in an LFPAK-56-5 (SOT669) surface-mount package. Key electrical parameters include a drain-source breakdown voltage of 80 V, a continuous drain current of 39 A, and a maximum on-resistance of 16.7 mΩ at 10 V gate drive. The device supports a gate-source voltage range of ±20 V with a typical threshold voltage of 3 V. It features a gate charge of 25.9 nC, power dissipation of 95 W, and operates within a temperature range of -55 °C to +175 °C.
Feature Summary
- Single N-channel enhancement mode configuration for efficient switching applications
- Low on-resistance design optimized for high-current power management
- LFPAK-56-5 package providing robust thermal performance and low profile
Applications
- DC-DC converter circuits
- Motor control systems
- Power distribution units
Procurement Notes
Verify the specific suffix 'CX' against official Nexperia documentation to confirm tape-and-reel specifications or marking variations. Ensure the component matches the LFPAK-56-5 footprint requirements. Confirm RoHS compliance status through the manufacturer's latest material declaration before finalizing procurement orders.
Selection Notes
Select this component when a single N-channel MOSFET with 80 V rating and approximately 40 A current capability is required. The LFPAK-56-5 package offers a balance between thermal dissipation and board space efficiency. Verify that the 16.7 mΩ on-resistance meets the system's conduction loss constraints and that the 80 V breakdown voltage provides adequate headroom for the application voltage.
Part Context
This part belongs to the Nexperia BUK7Y series of PowerTrench MOSFETs. These devices are designed for general-purpose power switching applications requiring high reliability and low losses. The series is widely used in industrial and automotive electronics where compact packaging and efficient heat dissipation are critical for system performance.
Replacement Considerations
Consult official Nexperia substitution guides for verified alternatives. Cross-reference pinouts and thermal characteristics if considering generic equivalents.
