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Product Detailed Parameters
- Description：MOSFET N-CH 55V 28.43A LFPAK56
- Series：TrenchMOS™
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：28.43A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：35mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：13.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：781 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：60W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK56, Power-SO8
- Package / Case：SC-100, SOT-669
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Overview
The BUK7Y35-55B,115 is an N-channel TrenchMOS standard level FET designed for automotive critical applications. It features a drain-source voltage of 55 V and a continuous drain current of 28.43 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 35 mΩ at 25 °C and supports a total power dissipation of 60 W. It operates with a junction temperature range up to 175 °C and includes non-repetitive avalanche energy capability of 33 mJ.
Feature Summary
- Qualified to AEC-Q101 standards for automotive reliability
- Optimized for standard level gate drive sources
- Capable of operation in thermally demanding environments with a 175 °C rating
Applications
- 12 V and 24 V loads
- Advanced braking systems (ABS)
- Engine management
- General purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the current product status directly with Nexperia or authorized distributors, as this component may be subject to obsolescence notices. Confirm that the SOT669 LFPAK package matches your PCB footprint requirements. Ensure design parameters remain within the specified absolute maximum ratings to prevent permanent damage.
Selection Notes
Select this component when a robust N-channel MOSFET with high thermal tolerance is required for automotive circuits. The standard level gate drive compatibility simplifies interface design with common logic controllers. Evaluate the thermal resistance characteristics against your specific heat sinking strategy to ensure reliable operation under load.
Part Context
This device utilizes NXP High-Performance Automotive (HPA) TrenchMOS technology. It belongs to the family of standard level enhancement mode Field-Effect Transistors. The product was originally developed by NXP Semiconductors before the business transitioned to Nexperia.
Replacement Considerations
Consult official Nexperia documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' devices without validating electrical parameters and pin configurations.
