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Product Detailed Parameters
- Description：MOSFET N-CH 40V LFPAK56 PWR-SO8
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK56, Power-SO8
- Package / Case：SC-100, SOT-669
Download product information
Overview
The BUK7Y3R0-40EX is a single N-channel enhancement mode MOSFET manufactured by Nexperia. It utilizes silicon technology and is housed in an LFPAK56 (SOT-669) surface-mount package. The device features a drain-source breakdown voltage of 40 V and a continuous drain current rating of 120 A. Its maximum on-resistance is specified at 3.0 milliohms, with a gate charge of 53 nanocoulombs. The component operates within a temperature range of -55 °C to +175 °C and supports a power dissipation of 115 W.
Feature Summary
- Utilizes TrenchMOS technology for optimized switching performance
- Designed for high thermal efficiency via the LFPAK56 leadless package
- Features low on-resistance for reduced conduction losses
Applications
- Motor control systems
- Power supply circuits
- DC-DC converters
Procurement Notes
Verify the specific suffix against official Nexperia documentation to confirm exact packaging and reel specifications. Ensure compliance with RoHS and REACH directives relevant to your region before procurement. Cross-reference the manufacturer part number with authorized distributor databases to validate authenticity and traceability.
Selection Notes
Select this component when a 40 V N-channel MOSFET with high current handling capability is required. The LFPAK56 package offers a compact footprint suitable for space-constrained designs. Evaluate the thermal resistance characteristics of the package against your system's heat dissipation requirements.
Part Context
This device belongs to the Nexperia BUK7Y series of power MOSFETs. The series is characterized by low on-resistance and high current density, utilizing advanced trench technology. These components are engineered for efficient power management in various industrial and consumer electronics applications.
Replacement Considerations
Consult official Nexperia substitution guides for verified alternatives. Direct replacements must match the 40 V rating, N-channel configuration, and LFPAK56 package dimensions.
