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The BUK7Y3R1-80M is an automotive qualified N-channel MOSFET utilizing Trench 14 split-gate technology for ultra-low RDSon. It operates with a drain-source voltage of 80 V and supports a continuous drain current of 160 A at 25 °C. The device features a maximum on-state resistance of 3.1 mΩ and total power dissipation of 254 W. Junction temperature ranges from -55 °C to 175 °C, with a gate-source voltage limit of ±20 V.
Verify the specific ordering suffix 'MX' against official Nexperia documentation to confirm reel specifications or tape-and-reel dimensions, as datasheets may list standard packaging variants. Confirm that the component status remains in production rather than development or preliminary phases before finalizing supply chain agreements.
Select this component when designing circuits requiring automotive-grade reliability combined with minimal conduction losses. The LFPAK56 package offers superior board-level reliability compared to traditional QFNs due to gull-wing lead flexibility. Ensure PCB thermal design accommodates the 254 W dissipation rating to maintain junction temperatures within the specified -55 °C to 175 °C range.
This device belongs to the Nexperia BUK7Y series, which employs advanced Trench 14 technology to deliver industry-leading power density. The series targets high-efficiency power management solutions where space constraints and thermal performance are critical. The LFPAK56 package provides a compact footprint suitable for dense automotive PCB layouts.
Direct substitutes include other BUK7Y series devices with compatible voltage and current ratings, such as the BUK7Y3R1-80EX or BUK7Y41-80EX, provided they match the LFPAK56 (SOT669) footprint and pinout configuration.
The peak drain current (IDM) is 754 A for pulses up to 10 µs at a mounting base temperature of 25 °C.
The LFPAK56 package uses copper clip technology to reduce thermal resistance and package inductance, while the gull-wing leads absorb mechanical stress during thermal cycling better than traditional QFN packages.