BUK7Y53-100B,115

$1.05

Description：MOSFET N-CH 100V 24.8A LFPAK56
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:748532d24717 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 24.8A LFPAK56
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：24.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：53mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：22 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1467 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：85W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：LFPAK56, Power-SO8
Package / Case：SC-100, SOT-669

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BUK7Y53-100B,115

Overview

The BUK7Y53-100B,115 is a standard level N-channel enhancement mode Field-Effect Transistor (FET) manufactured by Nexperia USA Inc. utilizing High-Performance Automotive (HPA) TrenchMOS technology. It features a drain-source voltage of 100 V and a continuous drain current of 24.8 A at 25 °C mounting base temperature. The device supports a total power dissipation of 85 W and operates within a junction temperature range of -55 °C to 175 °C. Packaged in the LFPAK plastic surface-mounted SOT669 format, it is designed for automotive critical applications and complies with AEC-Q101 standards.

Feature Summary

Compliant with AEC-Q101 qualification standards for automotive reliability
Compatible with standard level gate drive sources
Suitable for thermally demanding environments due to 175 °C rating

Applications

12 V, 24 V and 42 V loads
Automotive systems
DC-to-DC converters
Engine management
General purpose power switching
Solenoid drivers
Transmission control

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when an N-channel MOSFET with 100 V breakdown and high thermal resilience is required. The LFPAK package provides efficient heat dissipation for automotive environments. Ensure gate drive circuits support standard levels compatible with the device's threshold characteristics.

Part Context

This part belongs to the BUK7Y series of N-channel TrenchMOS FETs from Nexperia. These devices are engineered using HPA technology specifically for robust performance in automotive electronics. The LFPAK packaging offers a compact solution with enhanced thermal conductivity compared to traditional plastic packages.

Replacement Considerations

Check pinout compatibility and thermal resistance values when substituting. Verify that alternative components meet the same AEC-Q101 requirements and support the 175 °C operating temperature limit specified for this application.

FAQ

Is the BUK7Y53-100B suitable for medical or military applications?

No. The product is not designed, authorized, or warranted for use in medical, military, aircraft, space, or life support equipment where failure could result in severe consequences.