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Product Detailed Parameters
- Description：MOSFET
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The BUK7Y59-60E is a standard level N-channel MOSFET utilizing TrenchMOS technology, housed in an LFPAK56 (Power SO8) package. It features a drain-source voltage of 60 V and a maximum continuous drain current of 17 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 38.2 mΩ at 25 °C, rising to 59 mΩ at its maximum rating. Total power dissipation reaches 37 W under specified conditions. The component supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.
Feature Summary
- Qualified to the AEC Q101 automotive standard for high-performance applications
- Features true standard level gate operation with threshold voltage greater than 1 V at 175 °C
- Rated for repetitive avalanche energy to withstand demanding switching environments
- Designed for thermally demanding operations with a 175 °C junction temperature capability
Applications
- 12 V Automotive systems
- Motors, lamps and solenoid control
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm exact packaging and reel specifications. Confirm that the requested variant matches the LFPAK56 package outline SOT669. Ensure compliance with automotive qualification requirements if deploying in vehicle electronics. Validate thermal management designs against the provided transient thermal impedance data before finalizing procurement.
Selection Notes
Select this component when designing circuits requiring robust automotive-grade reliability and high thermal stability. The standard level gate drive simplifies driver circuit design while maintaining efficiency. Consider the 175 °C operating limit for applications with restricted cooling or high ambient temperatures. Evaluate the repetitive avalanche rating if the application involves inductive load switching without external clamping.
Part Context
This device belongs to Nexperia's standard level N-channel MOSFET portfolio, engineered specifically for automotive environments. It integrates TrenchMOS technology within the LFPAK56 surface-mount package to balance electrical performance with thermal conductivity. The product line targets designers needing qualified components for 12 V automotive architectures where space and heat dissipation are critical constraints.
Replacement Considerations
Consult official Nexperia substitution guides for verified alternatives. Cross-reference pinout configurations and thermal resistance values when evaluating potential replacements. Verify that any substitute maintains AEC Q101 compliance if automotive usage is required. Do not assume functional equivalence based solely on voltage and current ratings.
