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Product Detailed Parameters
- Description：MOSFET N-CH 80V 16A LFPAK56
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：72mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：9.8 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：633 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：45W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK56, Power-SO8
- Package / Case：SC-100, SOT-669
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Overview
The Nexperia BUK7Y72-80EX is an N-channel standard level MOSFET utilizing TrenchMOS technology, housed in an LFPAK56 (Power SO8) package. It features a drain-source voltage of 80 V and a maximum on-state resistance of 72 mΩ at 25 °C. The device supports a continuous drain current of 16 A and total power dissipation of 45 W. Qualified to AEC-Q101 standards, it operates with junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.
Feature Summary
- Compliant with AEC-Q101 automotive qualification standards for high-performance applications
- Features true standard level gate drive compatibility with threshold voltage greater than 1 V at elevated temperatures
- Rated for repetitive avalanche energy handling to withstand transient electrical stresses
- Designed for operation in thermally demanding environments with a 175 °C junction temperature limit
Applications
- 12 V, 24 V and 48 V automotive systems
- Motors, lamps and solenoid control
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix against the manufacturer's current catalog to confirm packaging configuration and reel specifications. Confirm that the component status remains active or qualified for new designs, as automotive-grade parts may undergo lifecycle transitions. Ensure the LFPAK56 footprint matches the target PCB layout requirements before finalizing procurement.
Selection Notes
Select this component when designing circuits requiring robust automotive-grade N-channel switching with low conduction losses. The standard level gate drive simplifies interface design with common logic-level controllers. Consider the thermal resistance characteristics and mounting base temperature limits to ensure adequate heat dissipation in the intended application environment.
Part Context
This part belongs to Nexperia's BUK7Y series of N-channel TrenchMOS MOSFETs designed for automotive use. The series utilizes advanced trench technology to achieve low on-resistance within compact surface-mount packages. These devices are engineered to meet stringent automotive reliability standards while providing efficient power switching capabilities for various vehicle subsystems.
Replacement Considerations
Consult official Nexperia documentation for verified cross-reference part numbers. Ensure any substitute maintains identical pinout, package dimensions, and AEC-Q101 compliance. Verify that electrical parameters such as breakdown voltage, on-resistance, and thermal characteristics meet or exceed the original specifications.
