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The BUK7Y7R0-40HX is an automotive qualified N-channel MOSFET utilizing Trench 9 superjunction technology in a LFPAK56 (SOT669) package. It features a drain-source voltage of 40 V and a maximum on-state resistance of 7 mΩ at 25 °C. The device supports a continuous drain current of 68 A at 25 °C mounting base temperature, with a peak pulsed current capability of 272 A. Total power dissipation reaches 64 W under specified thermal conditions. Junction temperature ranges from -55 °C to +175 °C.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel or cut tape specifications. Confirm that the component meets the required AEC-Q101 qualification status for your intended automotive application environment. Ensure compatibility with the LFPAK56 footprint dimensions provided in the datasheet before finalizing procurement orders.
Select this component for designs requiring low on-state resistance within a compact surface-mount package. The tight gate-source threshold voltage limits facilitate easy paralleling of multiple devices for higher current handling. Consider the 175 °C junction temperature rating for operation in thermally demanding environments where standard components may fail.
This part belongs to the Nexperia BUK7Y series of N-channel MOSFETs. These devices are designed using advanced Trench 9 superjunction technology to deliver high efficiency and robustness. The series is specifically targeted at automotive applications requiring high reliability and compliance with strict industry standards.
BUK7Y2R0-40H
The device uses Trench 9 low ohmic superjunction technology, which offers reduced cell pitch for enhanced power density and lower on-state resistance.
Yes, it is fully automotive qualified to meet AEC-Q101 requirements and is designed for use in thermally demanding automotive environments.