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Product Detailed Parameters
- Description：MOSFET N-CH 55V 75A SOT426
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6.2mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：108 nC @ 5 V
- Vgs (Max)：±15V
- Input Capacitance (Ciss) (Max) @ Vds：5836 pF @ 25 V
- FET Feature：Temperature Sensing Diode
- Power Dissipation (Max)：272W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
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Overview
The BUK9107-55ATE,118 is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology. It features integrated TrenchPLUS diodes for ESD protection and temperature sensing. Designed for automotive critical applications, it operates with a drain-source voltage of 55 V and continuous drain current up to 140 A at 25 °C mounting base temperature. The device includes an internal temperature sense diode with a forward voltage of approximately 658 mV at 25 °C and a coefficient of -1.54 mV/K. It supports junction temperatures from -55 °C to 175 °C.
Feature Summary
- Integrated temperature sensor enables responsive thermal monitoring
- Compliant with AEC-Q101 standards for automotive reliability
- Enhanced electrostatic robustness via integrated protection diodes
- Low conduction losses achieved through low on-state resistance
Applications
- 12 V and 24 V high power motor drives
- Automotive and general purpose power switching
- Electrical Power Assisted Steering (EPAS)
- Protected drive for lamps
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component for designs requiring precise thermal management alongside high-current switching capabilities. The inclusion of an integrated temperature sense diode allows for direct monitoring without external sensors. Ensure gate drive voltages align with the logic level requirements to maximize efficiency. Verify that the PCB footprint accommodates the D2PAK package dimensions and thermal dissipation needs for the intended operating environment.
Part Context
This device belongs to the Nexperia TrenchPLUS logic level FET family, manufactured using advanced TrenchMOS technology. It is specifically engineered for automotive critical applications, meeting rigorous AEC-Q101 qualification standards. The product integrates standard MOSFET functionality with additional protective and sensing features, distinguishing it from basic power transistors by offering enhanced system-level diagnostics and robustness against electrostatic discharge events.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation.
FAQ
How does the integrated temperature sense diode function?
The device includes an internal temperature sense diode connected between the anode and cathode pins. It provides a forward voltage that varies linearly with junction temperature, allowing for responsive thermal monitoring within the operating range of -55 °C to 175 °C.
What is the maximum continuous drain current rating?
The maximum continuous drain current is 140 A when the mounting base temperature is maintained at 25 °C. This value decreases as the mounting base temperature increases, as illustrated in the normalized continuous drain current curves.
