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Product Detailed Parameters
- Description：MOSFET N-CH 30V 75A DPAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：31 nC @ 5 V
- Vgs (Max)：±15V
- Input Capacitance (Ciss) (Max) @ Vds：3430 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：167W (Tc)
- Operating Temperature：-55°C ~ 185°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The BUK9207-30B,118 is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology. It features a drain-source voltage of 30 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device exhibits low on-state resistance, typically 4.45 mΩ at VGS=10V and 5.97 mΩ at VGS=5V. Designed for automotive critical applications, it supports junction temperatures up to 185 °C and includes avalanche ruggedness with non-repetitive energy handling of 329 mJ.
Feature Summary
- Logic level gate drive compatibility for direct interface with standard control sources
- High thermal stability suitable for demanding environments with an 185 °C rating
- Low conduction losses achieved through optimized on-state resistance
- Qualified for automotive critical applications in compliance with AEC-Q101 standards
Applications
- 12 V loads
- Automotive systems
- General purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the specific ordering suffix matches the required package variant. Confirm that the component status aligns with current production availability. Ensure the intended operating temperature range does not exceed the specified junction limits. Check for any recent product change notices affecting pinning or electrical characteristics before finalizing procurement.
Selection Notes
Select this component when low on-state resistance is critical for efficiency in logic-level driven circuits. Consider the 30 V drain-source voltage limit and 75 A current capability relative to the thermal management design. Evaluate the DPAK package constraints for heat dissipation requirements in the target application environment.
Part Context
This part belongs to Nexperia's TrenchMOS family of N-channel enhancement mode FETs. It is designed using advanced trench technology to provide high performance in a plastic surface-mounted package. The series is specifically qualified for automotive applications, ensuring reliability under strict industry standards.
Replacement Considerations
Direct substitutes include other logic level N-channel MOSFETs with similar 30 V ratings and DPAK packaging. Verify that alternative parts meet the same AEC-Q101 qualification and thermal resistance specifications to ensure functional equivalence.
