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Product Detailed Parameters
- Description：MOSFET N-CH 55V 55A DPAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：13.6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：48 nC @ 5 V
- Vgs (Max)：±15V
- Input Capacitance (Ciss) (Max) @ Vds：2916 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：115W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The BUK9215-55A is an N-channel TrenchMOS logic level FET designed for automotive and general power switching. It features a DPAK (SOT428) package with a drain-source voltage of 55 V and a continuous drain current of 62 A at 25 °C mounting base temperature. The device exhibits low on-state resistance, typically 13 mΩ at VGS = 5 V and ID = 25 A. Total power dissipation reaches 115 W at 25 °C. It supports junction temperatures up to 175 °C and includes avalanche ruggedness rated at 211 mJ.
Feature Summary
- Compliant with AEC-Q101 standards for automotive critical applications
- Logic level gate drive compatibility for efficient control
- Low conduction losses enabled by optimized on-state resistance
- High thermal stability suitable for demanding environments
Applications
- 12 V and 24 V load management
- Automotive power switching circuits
- General purpose power switching
- Motor, lamp, and solenoid control
Procurement Notes
Verify the specific ordering suffix and package variant against the official Nexperia datasheet before procurement. Confirm that the component meets AEC-Q101 qualification requirements if intended for automotive use. Ensure design parameters remain within the absolute maximum ratings defined in the product data sheet to prevent device damage.
Selection Notes
Select this component when high current handling and low conduction loss are required in a surface-mount DPAK package. The logic level gate drive capability allows direct interfacing with standard microcontrollers or drivers without additional level shifting. Consider the thermal resistance characteristics and mounting base temperature limits for heat dissipation planning in the target application.
Part Context
This part belongs to the Nexperia BUK9215 series of N-channel TrenchMOS FETs. It utilizes advanced trench technology to achieve superior performance compared to planar devices. The series is specifically engineered to meet the rigorous reliability standards required for modern automotive electronics while maintaining cost-effectiveness for mass production.
Replacement Considerations
Consult the Nexperia product selection guide for verified alternative part numbers within the same family or equivalent specifications. Ensure any substitute maintains compatible pinout, voltage ratings, and thermal characteristics.
