BUK9219-55A,118

Overview

The BUK9219-55A,118 is an N-channel TrenchMOS logic level enhancement mode Field-Effect Transistor (FET) manufactured by Nexperia. It utilizes TrenchMOS technology to achieve low on-state resistance and high current handling capabilities. The device is designed for automotive critical applications and complies with AEC-Q101 standards. Key electrical parameters include a drain-source voltage of 55 V, a continuous drain current of 55 A at 25 °C mounting base temperature, and a total power dissipation of 114 W. The maximum junction temperature rating is 175 °C.

Feature Summary

• Low conduction losses achieved through low on-state resistance
• Qualified for automotive critical applications in compliance with AEC-Q101
• Compatible with logic level gate drive sources
• Operates in thermally demanding environments with a 175 °C junction temperature rating

Applications

• 12 V and 24 V loads
• Automotive and general purpose power switching
• Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when designing circuits requiring high current switching with low conduction losses. Ensure the gate drive source supports logic level operation to fully enhance the channel. Verify thermal management strategies are adequate for the 114 W power dissipation rating under expected operating conditions. Confirm compatibility with automotive environmental standards if used in vehicle systems.

Part Context

This part belongs to the BUK9219 series of N-channel TrenchMOS FETs from Nexperia. These devices are engineered for robust performance in power switching applications. The DPAK package provides a balance between current capacity and thermal conductivity suitable for surface-mount assembly.

Replacement Considerations

Check datasheet specifications for direct pin-compatible substitutes within the Nexperia portfolio. Ensure any replacement matches the 55 V voltage rating, 55 A current capability, and DPAK package form factor.