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Product Detailed Parameters
- Description：MOSFET N-CH 55V 43A DPAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：43A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：22mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±15V
- Input Capacitance (Ciss) (Max) @ Vds：1724 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：94W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The BUK9225-55A,118 is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a DPAK (SOT428) plastic package. Designed for automotive critical applications, it features a drain-source voltage of 55 V and a continuous drain current of 43 A at 25 °C mounting base temperature. The device exhibits low on-state resistance, with typical values of 27 mΩ at 4.5 V gate drive and 19 mΩ at 10 V gate drive. It supports junction temperatures up to 175 °C and includes avalanche ruggedness capabilities.
Feature Summary
- AEC-Q101 compliant for automotive reliability
- Low conduction losses due to optimized on-state resistance
- Compatible with standard logic level gate drive sources
- Suitable for thermally demanding environments with 175 °C rating
Applications
- 12 V and 24 V loads
- Automotive and general purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component when driving directly from logic-level microcontrollers or standard gate drivers without requiring high gate voltages. The DPAK package offers a balance of thermal performance and space efficiency for surface-mount designs. Ensure the application accounts for the derating curves provided for mounting base temperatures above 25 °C to maintain the specified 43 A current capability safely.
Part Context
This part belongs to Nexperia's TrenchMOS family, specifically engineered for automotive-grade reliability. It serves as a robust power switching solution where low gate charge and fast switching speeds are beneficial. The integration of TrenchMOS technology allows for reduced component count and improved system efficiency compared to older planar MOSFET technologies in similar voltage and current classes.
Replacement Considerations
Check pinout compatibility and thermal resistance specifications when substituting. Verify that any alternative device meets the same AEC-Q101 qualification standards if used in automotive contexts. Ensure the replacement supports the required logic-level gate drive voltage to achieve comparable on-state resistance performance.
