BUK9230-55A,118

Description：MOSFET N-CH 55V 38A DPAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR)

SKU:7c1f3be0ce9a Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 55V 38A DPAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：38A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：27mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：1725 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：88W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：DPAK
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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BUK9230-55A,118

Overview

The BUK9230-55A is an N-channel TrenchMOS logic level FET designed for automotive critical applications. It features a 55 V drain-source voltage and supports a continuous drain current of 38 A at 25 °C mounting base temperature. The device exhibits low on-state resistance, specified as 33 mΩ at VGS = 4.5 V and ID = 15 A. Total power dissipation reaches 88 W under standard conditions. The component operates within a junction temperature range of -55 °C to +175 °C and includes avalanche ruggedness rated at 57.8 mJ.

Feature Summary

Logic level gate drive compatibility
Automotive qualification (AEC-Q101)
High thermal stability up to 175 °C
Low conduction losses

Applications

12 V and 24 V loads
Automotive power switching
General purpose power switching
Motor control
Lamp and solenoid drivers

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current catalog to ensure package and tape/reel specifications match design requirements. Confirm that the product status remains active or qualified for new designs, as automotive components may undergo lifecycle changes. Cross-reference the datasheet revision date with the latest official Nexperia documentation to ensure all electrical limits and thermal characteristics are current before finalizing procurement.

Selection Notes

Select this component when low on-state resistance is required for high-current switching applications in automotive environments. The logic level gate drive capability allows direct interfacing with standard microcontrollers or driver ICs without additional level shifting circuitry. Ensure the thermal management design accounts for the 175 °C maximum junction temperature rating to maintain reliability under demanding operating conditions.

Part Context

This part belongs to the Nexperia BUK92 series of N-channel TrenchMOS logic level FETs. These devices utilize advanced trench technology to achieve low RDS(on) while maintaining robust automotive qualification standards. The DPAK (SOT428) package provides a balance of thermal performance and surface-mount convenience for general-purpose power switching circuits.