ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 80V DPAK
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：32A
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The BUK9230-80EJ is an automotive-grade N-channel TrenchMOS logic level MOSFET manufactured by Nexperia. It utilizes Generation 6 technology and is housed in a DPAK (SOT669) surface-mount package. The device features a drain-source breakdown voltage of 80 V and a maximum continuous drain current of 32 A at 25 °C. Its on-state resistance is specified as 28 mΩ at a gate-source voltage of 10 V, ensuring low conduction losses. The component is fully qualified to the AEC-Q101 standard for operation in demanding environments.
Feature Summary
- Automotive-grade reliability with full AEC-Q101 qualification
- Logic-level gate drive capability for direct microcontroller interfacing
- Advanced TrenchMOS Generation 6 silicon technology
- DPAK surface-mount packaging for compact board integration
Applications
- Engine management systems
- Transmission control actuators
- Body electronics load switching
- General purpose power switching in automotive modules
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact marking codes and reel specifications. Ensure the procurement channel is an authorized distributor to guarantee authenticity and traceability. Confirm that the received components match the required AEC-Q101 automotive grade standards before integration into safety-critical designs.
Selection Notes
Select this component when designing circuits requiring robust automotive reliability combined with logic-level gate compatibility. The DPAK package offers a balance between thermal performance and space efficiency. Evaluate the 28 mΩ on-resistance against system power loss requirements and ensure the 32 A current rating accommodates peak load transients within the application's thermal constraints.
Part Context
This part belongs to Nexperia's extensive portfolio of automotive power MOSFETs designed for high-reliability vehicle applications. The 'BUK' prefix identifies it as an automotive-grade product, while the '9' indicates logic-level gate drive characteristics. It represents Generation 6 TrenchMOS technology, which provides improved performance over previous iterations in terms of on-resistance and ruggedness.
Replacement Considerations
Consult official Nexperia cross-reference guides for verified substitutes. Potential alternatives include other Generation 6 devices within the BUK series or equivalent parts from other manufacturers that meet identical AEC-Q101 qualifications and pinout configurations.
