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Product Detailed Parameters
- Description：MOSFET N-CH 100V 33A DPAK
- Series：TrenchMOS™
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：38.6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：3072 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：114W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The BUK9240-100A is an N-channel TrenchMOS logic level enhancement mode Field-Effect Transistor (FET) designed for automotive critical applications. It features a drain-source voltage of 100 V and a continuous drain current of 33 A at 25 °C mounting base temperature. The device exhibits low on-state resistance, typically 38.6 mΩ at VGS=10V and 40 mΩ at VGS=5V with ID=25A. Total power dissipation reaches 114 W at 25 °C. It supports junction temperatures up to 175 °C and includes avalanche ruggedness rated at 31 mJ.
Feature Summary
- Logic level gate drive compatibility enables direct control from standard logic sources.
- TrenchMOS technology ensures low conduction losses through minimized on-state resistance.
- Qualified for automotive environments with high thermal tolerance up to 175 °C junction temperature.
- Compliant with Q101 standards for robust performance in demanding conditions.
Applications
- 12 V and 24 V load switching
- Automotive power switching circuits
- General purpose power switching
- Motor control applications
- Lamp and solenoid driving
Procurement Notes
Verify the specific ordering suffix matches the required package variant. Confirm the component status against the latest Nexperia product data sheet to ensure availability. Check for any recent revision history updates that may affect pinning or electrical characteristics before finalizing procurement specifications.
Selection Notes
Select this FET for applications requiring logic-level gate drive capability without additional driver stages. Ensure the mounting base temperature remains within limits to sustain the 33 A continuous current rating. Consider the 175 °C junction temperature rating for high-thermal environments. Verify that the 100 V drain-source voltage exceeds the maximum circuit voltage including transients.
Part Context
This component belongs to the Nexperia TrenchMOS family, utilizing advanced trench gate technology to optimize the balance between on-resistance and switching performance. It is specifically engineered for automotive-grade reliability, meeting stringent qualification standards. The DPAK package provides efficient thermal dissipation for surface-mount implementations.
Replacement Considerations
Consult official Nexperia documentation for qualified alternative part numbers. Verify pinout compatibility and electrical parameter equivalence before substitution. Ensure any replacement meets the same automotive qualification standards if used in critical applications.
