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Product Detailed Parameters
- Description：MOSFET N-CH 100V 33A DPAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：38.6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：3072 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：114W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The BUK9240-100A is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a DPAK (SOT428) plastic package. It features a drain-source voltage of 100 V and a continuous drain current of 33 A at 25 °C. The device exhibits low on-state resistance, with a maximum of 38.6 mΩ at VGS = 10 V and ID = 25 A. Total power dissipation reaches 114 W at 25 °C mounting base temperature. It supports junction temperatures up to 175 °C and includes avalanche ruggedness rated at 31 mJ.
Feature Summary
- Logic level gate drive compatibility for efficient switching
- Low conduction losses due to optimized on-state resistance
- Qualified for automotive critical applications per AEC-Q101 standards
- High thermal endurance suitable for demanding environments
Applications
- 12 V and 24 V load switching
- Automotive power switching circuits
- General purpose power control
- Motor, lamp, and solenoid driving
Procurement Notes
Verify the specific ordering suffix matches the required packaging configuration. Confirm that the component meets the necessary AEC-Q101 qualification requirements for your target application environment. Ensure the selected variant aligns with the specified thermal management constraints and package dimensions defined in the official datasheet.
Selection Notes
Select this component when high current handling and low conduction loss are required in automotive or industrial settings. The logic level gate drive capability allows direct interfacing with standard microcontrollers or drivers without additional level shifting circuitry. Consider the thermal resistance characteristics and package size when designing the PCB layout for adequate heat dissipation.
Part Context
This part belongs to Nexperia's TrenchMOS family of N-channel MOSFETs designed for robust performance. The DPAK package provides a balance between electrical performance and thermal efficiency. The product is specifically engineered to meet the rigorous reliability standards required for modern automotive electronic systems.
Replacement Considerations
Check pinout compatibility and package dimensions against existing designs. Verify that alternative devices meet or exceed the 100 V rating, 33 A current capacity, and logic level gate threshold specifications.
