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The BUK9504-40A,127 is an N-channel enhancement mode power transistor utilizing TrenchMOS technology. It features a drain-source voltage (VDS) of 40 V and a continuous drain current (ID) of 198 A at 25 °C mounting base temperature. The device offers a maximum on-state resistance (RDSon) of 4.4 mΩ at VGS = 5 V and ID = 25 A. Total power dissipation reaches 300 W under specified conditions. The component supports a junction temperature up to 175 °C and includes a source-drain diode with a reverse recovery time of 260 ns.
Verify the specific package variant, as the BUK95 series encompasses multiple form factors including SOT78 (TO-220AB), SOT404 (D2-PAK), and SOT226 (I2-PAK). Confirm that the ordering suffix matches the required physical footprint. Check current product status, as availability may vary by region or distributor channel. Ensure compliance with RoHS directives if applicable to the target market.
Select this component for high-current switching applications requiring low on-state resistance. The logic level gate compatibility simplifies driver circuit design. Consider thermal management requirements due to high power dissipation capabilities. Verify that the 40 V rating provides sufficient margin for the specific system voltage. Evaluate the package type based on available board space and heatsinking constraints.
This part belongs to the BUK95/96/9E04-40A family of TrenchMOS logic level FETs manufactured by Nexperia USA Inc. The family shares similar electrical characteristics but differs in packaging options to suit various mounting needs. The BUK9504-40A specifically denotes the TO-220AB package variant within this lineup.
Direct substitutes include BUK9604-40A (SOT404 package) and BUK9E04-40A (SOT226 package) from the same datasheet family. Cross-referencing with other manufacturers' 40 V, ~4 mΩ N-channel MOSFETs in TO-220 packages is possible if pinouts and thermal characteristics align.