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Product Detailed Parameters
- Description：MOSFET N-CH 55V 75A TO220AB
- Series：TrenchMOS™
- Mfr：NXP USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5.4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：60 nC @ 5 V
- Vgs (Max)：±15V
- Input Capacitance (Ciss) (Max) @ Vds：7565 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：258W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The BUK9506-55B,127 is an N-channel TrenchMOS FET designed for automotive critical applications. It features a drain-source voltage of 55 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device exhibits low on-state resistance, typically 5.4 mΩ at VGS = 10 V and 25 °C. Total power dissipation reaches 258 W at 25 °C. It supports junction temperatures up to 175 °C and includes avalanche ruggedness with non-repetitive energy handling of 679 mJ.
Feature Summary
- Low conduction losses due to low on-state resistance
- Suitable for logic level gate drive sources
- Operates in thermally demanding environments with a 175 °C rating
- Q101 compliant for automotive reliability
Applications
- 12 V and 24 V loads
- Automotive systems
- General purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component when designing circuits requiring robust N-channel switching with high current capabilities. Ensure thermal management strategies account for the package's thermal resistance characteristics. Verify that gate drive voltages align with the specified threshold and plateau levels for optimal performance and minimal conduction losses.
Part Context
This part belongs to the BUK95 series of N-channel TrenchMOS FETs from NXP Semiconductors. The TO-220AB package provides a heatsink-mounted configuration suitable for high-power applications. The product utilizes TrenchMOS technology to achieve low on-state resistance and improved switching performance compared to standard planar technologies.
Replacement Considerations
Consult official documentation for direct substitutes within the BUK95 series or equivalent N-channel MOSFETs with matching voltage, current, and package specifications.
