BUK9507-30B,127

$0.41

Description：PFET, 75A I(D), 30V, 0.009OHM, 1
Series：*
Mfr：Nexperia USA Inc.
Package：Tube

SKU:0507342dd66f Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：PFET, 75A I(D), 30V, 0.009OHM, 1
Series：*
Mfr：Nexperia USA Inc.
Package：Tube
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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BUK9507-30B,127

Overview

The BUK9507-30B,127 is an N-channel enhancement mode power transistor manufactured by Nexperia using Philips High-Performance Automotive (HPA) TrenchMOS technology. It is housed in a SOT78 (TO-220AB) plastic package with the mounting base connected to the drain. Key electrical parameters include a drain-source voltage of 30 V, a continuous drain current of 75 A at 25 °C, and a typical on-state resistance of 5.9 mΩ. The device supports a total power dissipation of 157 W and operates within a junction temperature range of -55 °C to +175 °C.

Feature Summary

Compliant with AEC-Q101 automotive standards for critical applications.
Features logic level compatibility for standard gate drive sources.
Rated for operation in thermally demanding environments up to 175 °C.
Utilizes TrenchMOS technology to achieve low on-state resistance.

Applications

Automotive systems
12 V loads
Motors, lamps and solenoids
General purpose power switching

Procurement Notes

Verify component authenticity through authorized Nexperia distributors or certified supply chain partners. Confirm that the received part matches the specific SOT78 package outline and marking codes defined in the official datasheet. Ensure storage conditions adhere to moisture sensitivity levels to prevent damage prior to soldering. Review the most recent product data sheet for any updates regarding availability or specification changes before finalizing procurement orders.

Selection Notes

Select this component for designs requiring robust automotive-grade reliability and high current handling capabilities. The logic level gate drive compatibility simplifies interface requirements with standard control circuits. Consider the thermal management needs associated with the TO-220AB package when designing heat sinks. Verify that the 30 V drain-source voltage rating aligns with the maximum operating voltages of the target application circuit.

Part Context

This device belongs to the BUK95/9607 series of N-channel TrenchMOS logic level FETs. It shares technical similarities with the BUK9607-30B, which utilizes a surface-mount D2-PAK package instead of the through-hole TO-220AB configuration. Both variants are designed for automotive applications and feature comparable electrical characteristics derived from the same underlying semiconductor technology.

Replacement Considerations

The BUK9607-30B serves as a direct functional equivalent with identical electrical specifications but differs in package type (SOT404/D2-PAK). Designers must account for mechanical footprint differences and thermal dissipation variations when substituting between these package styles.