BUK9508-55A,127

Description：MOSFET N-CH 55V 75A TO220AB
Series：TrenchMOS™
Mfr：NXP USA Inc.
Package：Tube

SKU:84f3a7f67f03 Category: Single FETs, MOSFETs Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 55V 75A TO220AB
Series：TrenchMOS™
Mfr：NXP USA Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：7.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：92 nC @ 5 V
Vgs (Max)：±15V
Input Capacitance (Ciss) (Max) @ Vds：6021 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：253W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

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BUK9508-55A,127

Overview

The BUK9508-55A,127 is an N-channel enhancement mode power transistor utilizing TrenchMOS™ technology in a SOT78 (TO-220AB) plastic package. It features a drain-source voltage of 55 V and a continuous drain current of 125 A at 25 °C mounting base temperature. The device exhibits low on-state resistance, typically 6.8 mΩ at VGS = 5 V and ID = 25 A. It supports a junction temperature up to 175 °C and includes avalanche ruggedness with non-repetitive energy ratings of 670 mJ.

Feature Summary

TrenchMOS™ technology for very low on-state resistance
Logic level compatible gate drive
Automotive qualified per AEC-Q101 standards
High thermal stability rated for 175 °C junction temperature

Applications

12 V and 24 V load switching
Motor control circuits
Lamp driving applications
Solenoid actuation

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component for high-current switching applications requiring logic-level gate compatibility. Ensure adequate heatsinking to manage power dissipation, as continuous current is limited by package thermal constraints. Verify that the 55 V rating accommodates system transients and that the 175 °C junction temperature capability aligns with the thermal design environment.

Part Context

This part belongs to the BUK95/9608-55A series of TrenchMOS™ logic level FETs manufactured by NXP USA Inc. The BUK95 variant specifically utilizes the SOT78 (TO-220AB) through-hole package, while the BUK96 counterpart uses the SOT404 (D2-PAK) surface-mount package. Both share identical electrical characteristics but differ in physical form factor and mounting requirements.