BUK9509-75A,127

$1.11

Description：MOSFET N-CH 75V 75A TO220AB
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Bulk

SKU:7c5eb9f93867 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 75V 75A TO220AB
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：75 V
Current - Continuous Drain (Id) @ 25°C：75A (Tj)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：8.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：8.84 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：230W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

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BUK9509-75A,127

Overview

The BUK9509-75A,127 is a logic level N-channel enhancement mode Field-Effect Transistor (FET) manufactured by Nexperia. It utilizes TrenchMOS technology and is housed in a D2PAK plastic surface-mounted package (SOT404). Designed for automotive critical applications, it meets AEC-Q101 standards. The device supports a drain-source voltage of 75 V and a continuous drain current of 75 A at 25 °C mounting base temperature. It features low on-state resistance, with typical values ranging from 7.23 mΩ to 9.95 mΩ depending on gate drive conditions. The component operates within a junction temperature range of -55 °C to 175 °C.

Feature Summary

Logic level gate drive compatibility suitable for standard control sources
Automotive qualification compliant with AEC-Q101 standards
High thermal performance supporting operation up to 175 °C junction temperature
Low conduction losses enabled by optimized TrenchMOS technology

Applications

Power switching for 12 V, 24 V, and 42 V loads
Automotive power management systems
General purpose power switching circuits
Control of motors, lamps, and solenoids

Procurement Notes

Verify the specific ordering suffix matches the required tape and reel configuration. Confirm that the D2PAK package variant aligns with the target PCB footprint. Ensure design parameters respect the absolute maximum ratings for avalanche energy and peak drain current to maintain reliability under stress conditions.

Selection Notes

Select this component when high current handling near 75 A is required alongside robust automotive qualification. The logic level threshold allows direct interfacing with common microcontrollers or drivers without additional level shifting. Evaluate thermal dissipation requirements carefully, as continuous current capability decreases significantly as mounting base temperature increases beyond ambient levels.

Part Context

This part belongs to the BUK9609 series of N-channel TrenchMOS FETs. It shares the same electrical specifications and pinout as the BUK9609-75A but may differ in packaging or manufacturing lot details indicated by the suffix. The series is engineered for efficiency in power conversion and switching applications requiring low on-resistance and high ruggedness.