BUK9515-100A,127

BUK9515-100A,127

  • Description:MOSFET N-CH 100V 75A TO220AB
  • Series:TrenchMOS™
  • Mfr:Nexperia USA Inc.
  • Package:Tube

SKU:dd87016197e5 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET N-CH 100V 75A TO220AB
  • Series:TrenchMOS™
  • Mfr:Nexperia USA Inc.
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:14.4mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id:2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):±10V
  • Input Capacitance (Ciss) (Max) @ Vds:8600 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):230W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220AB
  • Package / Case:TO-220-3

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BUK9515-100A,127

Overview

The BUK9515-100A is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology. It is designed for automotive critical applications and complies with AEC Q101 standards. The device features a TO-220AB plastic package with a heatsink mount. Key electrical parameters include a drain-source voltage of 100 V, a continuous drain current of 75 A at 25 °C mounting base temperature, and a total power dissipation of 230 W. The on-state resistance is typically 11.5 mΩ at VGS = 10 V and 12 mΩ at VGS = 5 V, both measured at ID = 25 A and Tj = 25 °C. The junction temperature range spans from -55 °C to +175 °C.

Feature Summary

  • Compliant with AEC Q101 automotive qualification standards
  • Low conduction losses achieved through low on-state resistance
  • Logic level gate drive capability suitable for standard control sources

Applications

  • Automotive power switching systems
  • General purpose power switching
  • High current load management

Procurement Notes

Verify the specific ordering suffix matches the required package variant. Confirm that the component meets the necessary AEC Q101 reliability requirements for the intended automotive application. Ensure thermal management designs account for the specified junction-to-mounting base thermal resistance. Check for any recent datasheet revisions or obsolescence notices from the manufacturer before finalizing procurement plans.

Selection Notes

Select this component when high current handling and low on-resistance are required in an automotive environment. The logic level gate threshold allows direct interfacing with standard microcontrollers or drivers without additional level shifting. Consider the TO-220AB package constraints regarding board space and heatsinking capabilities compared to surface-mount alternatives.

Part Context

This part belongs to Nexperia's (formerly NXP) BUK95 series of N-channel TrenchMOS logic level FETs. These devices are engineered for robust performance in demanding environments, specifically targeting automotive electronics where reliability under thermal stress is critical. The series utilizes advanced trench gate technology to minimize resistive losses while maintaining high avalanche ruggedness.

Replacement Considerations

Direct substitutes within the same family include BUK9512-100A and BUK9508-100A, which offer lower on-resistance but may have different current ratings. Verify pinout compatibility and thermal characteristics when considering cross-references from other manufacturers.

BUK9515-100A,127BUK9515-100A,127

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