ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：PFET, 13A I(D), 55V, 0.161OHM, 1
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：137mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：339 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：53W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
Download product information
Overview
The Nexperia BUK95150-55A is an N-channel enhancement mode logic level power MOSFET utilizing TrenchMOS technology. It features a maximum drain-source voltage of 55 V and a continuous DC drain current of 13 A at 25 °C mounting base temperature. The device offers a low on-state resistance of 150 mΩ at VGS = 5 V and 137 mΩ at VGS = 10 V, both measured at ID = 13 A. Total power dissipation reaches 53 W at 25 °C. The component supports a junction temperature up to 175 °C and is available in TO220AB (SOT78) and SOT404 packages.
Feature Summary
- Logic level gate drive capability allows direct interfacing with standard logic circuits.
- TrenchMOS technology ensures very low on-state resistance for high efficiency.
- High thermal performance supports operation in demanding environments.
Applications
- Automotive switching applications
- General purpose power switching
- DC-to-DC converters
Procurement Notes
Verify the specific package variant required for the design, as the part is available in through-hole TO220AB and surface-mount SOT404 configurations. Confirm that the sourcing channel provides original manufacturer documentation to ensure compliance with the specified absolute maximum ratings and thermal characteristics.
Selection Notes
Select this component when a 55 V N-channel MOSFET with logic-level gate drive is required. Ensure the application can accommodate the 13 A continuous current limit at 25 °C or apply appropriate derating curves for higher mounting base temperatures. Verify that the PCB footprint matches either the TO220AB or SOT404 mechanical dimensions.
Part Context
This device belongs to the Philips/Nexperia TrenchMOS transistor family, designed for automotive and general-purpose switching. It is distinct from the BUK96150-55A logic FET and other Nexperia MOSFETs like the BUK98150 by its specific 55 V rating and 13 A current capacity in plastic envelopes.
Replacement Considerations
Check datasheets for alternative N-channel MOSFETs with matching 55 V VDS and comparable RDS(ON) values. Ensure replacement parts support similar logic-level gate drive requirements and fit within the existing thermal management constraints of the TO220AB or SOT404 form factor.
