BUK9516-55A,127

$0.54

Description：PFET, 66A I(D), 55V, 0.017OHM, 1
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube

SKU:4d26d5d786b5 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：PFET, 66A I(D), 55V, 0.017OHM, 1
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：66A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：15mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：3.085 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：138W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

Download product information

BUK9516-55A,127

Overview

The BUK9516-55A is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a TO-220AB plastic package. Designed for automotive critical applications, it meets AEC-Q101 standards. Key electrical parameters include a drain-source voltage (VDS) of 55 V and a continuous drain current (ID) of 66 A at Tamb = 25 °C. The typical on-state resistance (RDSon) is 10 mΩ at VGS = 10 V and 12.5 mΩ at VGS = 5 V, both measured at ID = 25 A and Tj = 25 °C. Total power dissipation reaches 138 W, with a junction temperature range of -55 °C to 175 °C.

Feature Summary

Logic-level compatible gate drive sources
Low conduction losses due to low on-state resistance
Qualified for thermally demanding environments

Applications

Automotive power switching
General purpose power switching
Motor control loads

Procurement Notes

Verify the specific ordering suffix matches the required package variant. Confirm that the component status aligns with current production requirements. Check for any recent revision updates to the datasheet to ensure parameter consistency. Validate that the supplier provides traceability documentation suitable for automotive quality standards. Ensure storage conditions comply with the specified temperature limits.

Selection Notes

Select this component when low on-state resistance is critical for efficiency in high-current applications. The logic-level gate drive capability simplifies driver circuit design by allowing direct interface with standard logic outputs. Consider the thermal management requirements given the TO-220AB package and mounting base dependency for power dissipation ratings.

Part Context

This device belongs to Nexperia's TrenchMOS portfolio, specifically engineered for robust performance in automotive and industrial sectors. It represents an evolution from previous NXP Standard Product lines, maintaining compatibility with established automotive qualification protocols while offering improved power density through advanced trench gate technology.