ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 40V 120A TO220AB
- Series：TrenchMOS™
- Mfr：NXP USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：1.7mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：120 nC @ 5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：16400 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：349W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
Download product information
Overview
The BUK951R9-40E is an N-channel TrenchMOS logic level MOSFET manufactured by NXP Semiconductors. It utilizes TrenchMOS technology and is housed in a TO-220AB (SOT78A) plastic single-ended package with a heatsink mount. Designed for high-performance automotive applications, it meets the AEC Q101 standard. Key electrical parameters include a drain-source voltage of 40 V, a continuous drain current of 120 A at 25 °C mounting base temperature, and a total power dissipation of 349 W. The device features a maximum on-state resistance of 1.84 mΩ at 25 °C and supports junction temperatures up to 175 °C.
Feature Summary
- Compliant with AEC Q101 standards for automotive reliability
- Rated for repetitive avalanche operation
- Operates in thermally demanding environments up to 175 °C
- Features true logic level gate control
Applications
- 12 V Automotive systems
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix and package variant against the official NXP product data sheet before procurement. Confirm that the TO-220AB (SOT78A) package dimensions match the target PCB layout and heatsinking requirements. Ensure the component meets the required AEC Q101 qualification status for the intended automotive application environment.
Selection Notes
Select this component for applications requiring high current handling and low on-state resistance in automotive environments. The 40 V rating and 120 A continuous current capability suit high-power switching tasks. Verify thermal management solutions are adequate given the 349 W power dissipation rating and the requirement for heatsink mounting to maintain optimal junction temperatures.
Part Context
This part belongs to the BUK9 series of N-channel TrenchMOS logic level FETs from NXP Semiconductors. These devices are engineered for robust performance in automotive electronics, leveraging advanced trench technology to achieve low resistance and high efficiency within standard through-hole packages suitable for high-power thermal management.
Replacement Considerations
Consult the official NXP replacement guide or datasheet revision history for confirmed substitute part numbers. Do not assume cross-compatibility with other manufacturers' parts without verifying pinout, electrical limits, and package dimensions.
