BUK9528-100A,127

Description：MOSFET N-CH 100V 49A TO220AB
Series：TrenchMOS™
Mfr：NXP USA Inc.
Package：Tube

SKU:3dc4c50b35d1 Category: Single FETs, MOSFETs Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 49A TO220AB
Series：TrenchMOS™
Mfr：NXP USA Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：49A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：27mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：4293 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：166W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

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BUK9528-100A,127

Overview

The BUK9528-100A,127 is an N-channel enhancement mode logic level field-effect power transistor manufactured by NXP USA Inc. utilizing TrenchMOS technology for low on-state resistance. It is available in TO220AB and SOT404 packages. Key electrical parameters include a drain-source voltage of 100 V, a DC drain current of 49 A at 25 °C mounting base temperature, and a total power dissipation of 166 W. The device features a maximum junction temperature of 175 °C and a typical RDS(ON) of 28 mΩ at VGS = 5 V.

Feature Summary

Logic level gate drive capability allows direct control from standard logic interfaces.
TrenchMOS technology provides very low on-state resistance for high efficiency.
Robust avalanche energy rating supports operation with unclamped inductive loads.

Applications

Automotive switching applications
General purpose switching circuits

Procurement Notes

Verify the manufacturer designation as Philips Semiconductors or NXP USA Inc. when sourcing this component. Confirm the package type matches your design requirements, specifically choosing between the through-hole TO220AB or surface-mount SOT404 variants. Ensure that static discharge precautions are observed during handling due to the sensitivity of the MOS gate oxide.

Selection Notes

Select this component for designs requiring high current handling up to 49 A and robust thermal performance. Consider the specific package footprint (TO220AB vs SOT404) based on board space and mounting constraints. Evaluate the thermal resistance characteristics against your heat sinking strategy to ensure the junction temperature remains within the 175 °C limit under expected load conditions.

Part Context

This part belongs to the BUK95 series of N-channel TrenchMOS transistors. It is designed to offer superior performance compared to standard MOSFETs through reduced on-resistance. The product specification was originally published by Philips Semiconductors before the division became part of NXP.