BUK9529-100B,127

Description：MOSFET N-CH 100V 46A TO220AB
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube

SKU:c52ebd0b1d0f Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 46A TO220AB
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：46A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：27mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：33 nC @ 5 V
Vgs (Max)：±15V
Input Capacitance (Ciss) (Max) @ Vds：4360 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：157W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

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BUK9529-100B,127

Overview

The BUK9529-100B is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology. It features a drain-source voltage of 100 V and a continuous drain current of 46 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 22 mΩ at VGS = 10 V and 25 °C, or 24 mΩ at VGS = 5 V. Total power dissipation reaches 157 W at 25 °C. It operates within a junction temperature range of -55 °C to 175 °C and is qualified to AEC-Q101 standards for automotive applications.

Feature Summary

AEC-Q101 compliant for automotive critical applications
Low conduction losses due to low on-state resistance
Suitable for logic level gate drive sources
Operates in thermally demanding environments with a 175 °C rating

Applications

12 V, 24 V and 42 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current catalog to confirm package type and tape/reel specifications. Confirm that the component meets the required AEC-Q101 qualification status for your target application. Ensure thermal management designs account for the specified junction-to-mounting base thermal resistance values under actual operating conditions.

Selection Notes

Select this component when a logic level N-channel MOSFET with high current capability is required for automotive or industrial power switching. The low on-state resistance minimizes conduction losses, while the 175 °C junction temperature rating supports operation in thermally demanding environments. Verify that the gate drive voltage aligns with the specified threshold characteristics for optimal performance.

Part Context

This part belongs to the Nexperia BUK95 series of N-channel TrenchMOS logic level FETs. These devices are designed using advanced trench technology to provide low on-resistance and efficient switching. The series is widely used in automotive and general power applications requiring robust performance and compliance with automotive quality standards.