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Product Detailed Parameters
- Description：MOSFET N-CH 30V 75A TO220AB
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：2.4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：89 nC @ 5 V
- Vgs (Max)：±15V
- Input Capacitance (Ciss) (Max) @ Vds：10185 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：300W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The BUK952R8-30B is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a TO-220AB plastic package. Designed for automotive critical applications, it meets AEC-Q101 standards. Key electrical parameters include a drain-source voltage of 30 V and a continuous drain current of 75 A at a mounting base temperature of 25 °C. The device features a maximum total power dissipation of 300 W. Static characteristics specify an on-state resistance of 2.4 mΩ to 2.8 mΩ at VGS = 5 V and ID = 25 A. It supports junction temperatures up to 175 °C and includes avalanche ruggedness with a non-repetitive drain-source avalanche energy rating of 2.3 J.
Feature Summary
- AEC Q101 compliant for automotive critical applications
- Low conduction losses due to low on-state resistance
- Suitable for logic level gate drive sources
- Operates in thermally demanding environments with a 175 °C rating
Applications
- 12 V loads
- Automotive systems
- General purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm package type and reel specifications. Confirm that the component status remains active for new designs, as product lifecycles may change. Ensure compatibility with required thermal management solutions given the high power dissipation capabilities of the TO-220AB package. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability.
Selection Notes
Select this component when designing circuits requiring robust N-channel MOSFET performance under automotive conditions. The logic level gate drive capability simplifies control interface design by allowing operation with lower gate voltages. Consider the thermal resistance characteristics and mounting base requirements for effective heat dissipation in high-current applications. Verify that the 30 V drain-source voltage rating aligns with the system's maximum operating voltage and transient spikes.
Part Context
This device belongs to the BUK95 series of N-channel TrenchMOS logic level FETs manufactured by Nexperia (formerly NXP Semiconductors). The series is characterized by its use of advanced trench technology to achieve low on-state resistance and improved switching performance. These transistors are specifically engineered to meet the rigorous reliability and quality standards required for modern automotive electronic systems.
Replacement Considerations
Consult official Nexperia substitution guides or datasheets for verified equivalent parts. Ensure any replacement maintains AEC-Q101 compliance if used in automotive contexts. Verify that alternative components match the TO-220AB package dimensions and pinout configuration to ensure mechanical compatibility.
