BUK9535-55,127

$0.57

Description：MOSFET N-CH 55V 34A TO220AB
Series：TrenchMOS™
Mfr：NXP USA Inc.
Package：Tube

SKU:b5c3468e5b35 Category: Single FETs, MOSFETs Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 55V 34A TO220AB
Series：TrenchMOS™
Mfr：NXP USA Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：35mOhm @ 17A, 5V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：1400 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：85W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

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BUK9535-55,127

Overview

The BUK9535-55,127 is an N-channel enhancement mode logic level field-effect power transistor manufactured by NXP USA Inc. utilizing TrenchMOS technology in a TO-220AB plastic envelope. It features very low on-state resistance and integral Zener diodes providing electrostatic discharge (ESD) protection up to 2 kV. The device supports a drain-source voltage of 55 V and a continuous DC drain current of 34 A at 25 °C mounting base temperature. Key electrical parameters include a maximum RDS(ON) of 35 mΩ at VGS = 5 V and ID = 17 A, with a total power dissipation capability of 85 W.

Feature Summary

TrenchMOS technology for low on-state resistance
Logic level gate drive capability
Integrated ESD protection via Zener diodes

Applications

Automotive switching applications
General purpose switching applications

Procurement Notes

Verify the component status as discontinued or obsolete through official manufacturer channels before procurement planning. Confirm that the TO-220AB package dimensions and pinout align with existing board layouts. Ensure thermal management designs account for the specified junction-to-mounting base thermal resistance values under expected operating conditions.

Selection Notes

Select this component for applications requiring robust N-channel switching with high current handling capabilities. The logic level gate threshold allows direct interfacing with standard logic outputs without additional driver stages. Consider the thermal derating curves when designing for ambient temperatures exceeding 25 °C to maintain safe operating area limits.

Part Context

This part belongs to the Philips Semiconductors (now NXP) TrenchMOS family of power transistors. It represents a specific variant within the broader portfolio of N-channel enhancement mode devices designed for high-efficiency power switching. The TO-220AB package provides a standardized mechanical form factor for through-hole mounting and heatsink attachment.