BUK953R2-40E,127

Description：MOSFET N-CH 40V 100A TO220AB
Series：TrenchMOS™
Mfr：NXP USA Inc.
Package：Tube

SKU:445cbf80ff40 Category: Single FETs, MOSFETs Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 100A TO220AB
Series：TrenchMOS™
Mfr：NXP USA Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：2.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：69.5 nC @ 5 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：9150 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：234W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

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BUK953R2-40E,127

Overview

The BUK953R2-40E is an N-channel TrenchMOS logic level FET designed for high-performance automotive applications. It operates with a drain-source voltage of 40 V and supports a continuous drain current of 100 A at a mounting base temperature of 25 °C. The device features a low on-state resistance of 2.7 mΩ typ at VGS = 5 V and ID = 25 A, enabling efficient power switching. It includes repetitive avalanche rating capability and is qualified to the AEC-Q101 standard. The component utilizes a TO-220AB (SOT78A) package with a mounting base connected to the drain.

Feature Summary

Qualified to AEC-Q101 standard for automotive use
Repetitive avalanche rated for robust operation
Suitable for thermally demanding environments with a 175 °C junction temperature rating
True logic level gate with threshold voltage greater than 0.5 V at 175 °C

Applications

12 V Automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix matches the required package variant. Confirm that the application environment remains within the specified thermal limits and does not exceed absolute maximum ratings. Ensure design safeguards are in place as the product is not warranted for life-critical or safety-critical systems without further agreement. Check for any recent updates to the datasheet status before finalizing procurement.

Selection Notes

Select this component when a logic level N-channel MOSFET with high current handling and automotive qualification is required. The TO-220AB package provides effective heat dissipation for high-power applications. Consider the repetitive avalanche rating if inductive load switching is present. Verify that the gate drive voltage meets the logic level requirements for optimal on-state resistance performance.

Part Context

This part belongs to the N-channel TrenchMOS logic level FET family from NXP Semiconductors. It is specifically engineered for automotive environments requiring high reliability and thermal stability. The device integrates advanced trench technology to achieve low on-resistance while maintaining robust avalanche capabilities suitable for demanding power switching tasks.