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Product Detailed Parameters
- Description：MOSFET N-CH 60V 120A TO220AB
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：120A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：3.4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：95 nC @ 5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：13490 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：293W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The BUK953R5-60E,127 is a single N-channel TrenchMOS logic level field-effect transistor manufactured by Nexperia. It utilizes advanced trench technology to achieve low on-state resistance and high current handling capabilities within a TO-220AB package. The device features a drain-source voltage rating of 60 V and supports a continuous drain current of 120 A at 25 °C. Its total power dissipation capacity reaches 293 W under specified conditions. Key electrical parameters include a maximum on-resistance of 3.5 mΩ and a gate threshold voltage typically around 2.4 V. The component is designed for robust performance in demanding switching environments.
Feature Summary
- Single N-channel configuration utilizing TrenchMOS technology for enhanced efficiency
- Logic level gate drive capability suitable for direct interface with standard logic circuits
- High thermal stability rated for operation up to 175 °C junction temperature
- Repetitive avalanche rated for improved ruggedness in inductive load applications
Applications
- Motor control systems requiring high current switching
- Solenoid and lamp control circuits
- General purpose power switching applications
- DC-DC converter implementations
Procurement Notes
Verify the specific suffix code against official Nexperia documentation to confirm package type and tape/reel specifications. Confirm RoHS compliance status and REACH SVHC declarations prior to integration. Ensure that the procurement channel provides valid traceability records for this discrete semiconductor component.
Selection Notes
Select this component for applications requiring high current density and low conduction losses in a through-hole format. Evaluate thermal management requirements carefully given the 293 W power dissipation rating. Compare gate charge characteristics against driver capabilities to ensure optimal switching speeds and minimize dynamic losses during operation.
Part Context
This part belongs to the BUK95 series of N-channel MOSFETs from Nexperia, which are engineered for automotive and industrial power management. The series emphasizes low Rds(on) and high reliability. The BUK953R5 variant specifically targets high-current scenarios where efficient heat dissipation and robust avalanche performance are critical design constraints.
Replacement Considerations
Public sources indicate this specific part number is obsolete and no longer manufactured. Designers should consult official Nexperia substitution guides or contact authorized distributors for verified alternative components that match the electrical and mechanical specifications.
