BUK954R4-40B,127

Description：MOSFET N-CH 40V 75A TO220AB
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube

SKU:3393e3576547 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 75A TO220AB
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：64 nC @ 5 V
Vgs (Max)：±15V
Input Capacitance (Ciss) (Max) @ Vds：7124 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：254W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

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BUK954R4-40B,127

Overview

The BUK954R4-40B is an N-channel enhancement mode TrenchMOS logic level FET designed for automotive critical applications. It features a TO-220AB plastic package with a mounting base connected to the drain. Key electrical parameters include a maximum drain-source voltage of 40 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 3.6 mΩ at VGS=10V and 4.4 mΩ at VGS=5V. Total power dissipation reaches 254 W, while non-repetitive avalanche energy supports 961 mJ. Operating junction temperatures range from -55 °C to 175 °C.

Feature Summary

AEC-Q101 compliant for automotive reliability
Low conduction losses due to low on-state resistance
Suitable for logic level gate drive sources
Operates in thermally demanding environments up to 175 °C

Applications

12 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix matches the required package variant. Confirm that the component status remains active for new designs. Ensure compliance with RoHS and REACH regulations relevant to your region. Check for any product change notices affecting pinning or thermal characteristics before finalizing the bill of materials.

Selection Notes

Select this component when a robust N-channel MOSFET with high current capability is required in a through-hole package. The logic level gate drive compatibility simplifies control circuit design. Verify that the thermal management solution can handle the specified power dissipation limits under worst-case operating conditions.

Part Context

This part belongs to the Nexperia TrenchMOS family, utilizing advanced trench gate technology to achieve low on-resistance. It is manufactured by Nexperia USA Inc. and falls under the category of discrete semiconductors, specifically power field-effect transistors intended for general-purpose and automotive switching applications.