BUK9608-55B,118

Overview

The BUK9608-55B,118 is an N-channel TrenchMOS logic level FET in a D2PAK (SOT404) package. It features a drain-source voltage of 55 V and continuous drain current up to 75 A at 25 °C mounting base temperature. The device exhibits low on-state resistance, typically 6.27 mΩ at VGS=10V and 7.1 mΩ at VGS=5V. Total power dissipation reaches 203 W at 25 °C. It operates within a junction temperature range of -55 °C to +175 °C and supports non-repetitive avalanche energy of 352 mJ.

Feature Summary

• Logic level gate drive compatibility for direct interface with standard logic sources
• AEC-Q101 qualification for automotive critical applications
• High thermal stability suitable for demanding environments up to 175 °C

Applications

• 12 V and 24 V load switching
• Automotive systems
• General purpose power switching
• Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when low conduction losses are required in automotive or general power switching applications. The logic level threshold allows efficient drive from standard logic voltages. Ensure thermal management accommodates the 203 W dissipation rating at 25 °C mounting base temperature. Verify that the 55 V drain-source voltage exceeds the maximum circuit voltage including transients.

Part Context

This part belongs to Nexperia's BUK96 series of N-channel TrenchMOS logic level FETs. These devices utilize TrenchMOS technology to achieve low on-state resistance. The series is designed for high-performance switching in plastic packages, specifically targeting automotive and industrial markets requiring robust reliability and thermal performance.

Replacement Considerations

Check for pin-compatible alternatives within the same D2PAK/SOT404 footprint. Verify that any substitute matches the 55 V VDS, 75 A ID, and logic level RDS(on) specifications. Confirm AEC-Q101 compliance if automotive qualification is mandatory.