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The BUK9610-55A,118 is a single N-channel TrenchMOS logic level MOSFET manufactured by NXP Semiconductors. It features a maximum drain-source voltage of 55 V and a continuous drain current of 75 A at case temperature. The device is housed in a D2PAK surface-mount package with a thermal resistance designed for efficient heat dissipation, rated at 200 W under specific thermal conditions. This component utilizes advanced trench technology to achieve low on-resistance and high switching performance suitable for power management applications.
Verify the obsolete status of this part number before initiating procurement processes. Confirm availability of authorized substitutes or alternative series from NXP Semiconductors. Ensure that any replacement components meet the original electrical specifications and package dimensions required for your design. Check with distributors for current stock levels of compatible alternatives.
Select this component based on its 55 V rating and 75 A current capacity requirements. Consider the D2PAK package for thermal management needs in space-constrained designs. Evaluate the TrenchMOS technology benefits for switching losses. Ensure the application environment supports the specified operating temperatures and voltage limits defined in the official datasheet.
This part belongs to the BUK96xx-55A series of N-channel MOSFETs from NXP Semiconductors. These devices are characterized by their robust construction and suitability for general-purpose power switching. The series offers various current ratings within the same voltage class, allowing designers to choose based on specific load requirements while maintaining consistent package and thermal characteristics.
The BUK9610-55A,118 is listed as obsolete. Potential substitutes include similar N-channel MOSFETs from the BUK96xx series or other manufacturers offering comparable 55 V, 75 A specifications in D2PAK packages. Verify pinout compatibility and thermal performance when selecting an alternative.