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The BUK9612-55B,118 is an N-channel TrenchMOS logic level FET in a D2PAK (SOT404) plastic package. It features a drain-source voltage of 55 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 10 mΩ at VGS=10V and 10.2 mΩ at VGS=5V. Total power dissipation reaches 157 W at 25 °C. It operates within a junction temperature range of -55 °C to +175 °C and includes avalanche ruggedness with a non-repetitive energy rating of 172 mJ.
Verify component authenticity by checking the manufacturer's marking code against official datasheet specifications. Confirm the SOT404 package outline matches the physical dimensions provided. Ensure the ordering suffix corresponds to the specific reel or tape configuration required for your assembly line. Cross-reference the part number with the latest Nexperia product status to confirm availability and obsolescence warnings before finalizing procurement orders.
Select this component when low on-state resistance is required for high-current applications operating at 55 V. The logic-level gate drive capability simplifies driver circuit design compared to standard threshold devices. Consider the D2PAK package thermal performance for heat dissipation requirements. Verify that the application environment falls within the specified -55 °C to +175 °C junction temperature range for reliable operation.
This device belongs to Nexperia's TrenchMOS family, utilizing advanced trench technology to enhance performance. It is designed specifically for automotive-grade reliability while maintaining cost-effectiveness for general industrial use. The D2PAK package provides robust surface-mount integration with efficient thermal transfer to the printed-circuit board mounting base.
Check for updated revisions within the BUK96_ series. Verify pinout compatibility with the existing SOT404 footprint. Ensure replacement parts meet the same AEC-Q101 qualification standards if used in automotive contexts.