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Product Detailed Parameters
- Description：MOSFET N-CH 55V 73A D2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：73A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：13mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：3307 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：149W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BUK9614-55A is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a SOT404 (D2PAK) plastic package. Designed for automotive critical applications, it meets AEC-Q101 standards. Key electrical parameters include a drain-source voltage of 55 V and a continuous drain current of 73 A at 25 °C mounting base temperature. The device features a typical on-state resistance of 12 mΩ at VGS=5V and ID=25A. It supports a total power dissipation of 149 W and operates with junction temperatures up to 175 °C.
Feature Summary
- Compliant with AEC-Q101 standards for automotive critical applications
- Low conduction losses achieved through low on-state resistance
- Compatible with logic level gate drive sources
- Suitable for thermally demanding environments due to 175 °C rating
Applications
- 12 V and 24 V loads
- Automotive and general purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the specific ordering suffix matches the required packaging configuration. Confirm that the component version aligns with the latest product data sheet revision. Ensure design inputs account for the absolute maximum ratings provided in the official documentation to prevent device stress or damage during operation.
Selection Notes
Select this component when high current handling capability is required alongside low on-state resistance for efficiency. The logic level gate drive compatibility simplifies control circuitry design. Verify thermal management requirements against the specified junction-to-mounting base thermal resistance for the intended application environment.
Part Context
This part belongs to Nexperia's TrenchMOS family of N-channel MOSFETs. It is specifically engineered for robust performance in automotive systems where reliability under varying thermal conditions is essential. The D2PAK package provides efficient heat dissipation capabilities suitable for power switching applications.
Replacement Considerations
Consult official Nexperia substitution guides for verified alternatives. Cross-reference pinout configurations and electrical specifications carefully before replacing existing components in established designs.
