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Product Detailed Parameters
- Description：MOSFET N-CH 60V 56A D2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：12.8mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：20.5 nC @ 5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：2651 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：96W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BUK9614-60E,118 is an N-channel TrenchMOS logic level MOSFET in a D2PAK (SOT404) package. It features a drain-source voltage of 60 V and a continuous drain current of 56 A at 25 °C mounting base temperature. The typical on-state resistance is 11.5 mΩ at VGS = 5 V and ID = 15 A. Total power dissipation reaches 96 W. The device supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.
Feature Summary
- AEC-Q101 qualified for high-performance automotive applications
- True logic level gate operation with threshold voltage greater than 0.5 V at 175 °C
- Repetitive avalanche rated for robust switching performance
- Suitable for thermally demanding environments due to 175 °C junction temperature rating
Applications
- 12 V Automotive systems
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component for designs requiring low on-resistance at standard logic gate drive levels. The SOT404 package provides a balance of thermal performance and board space efficiency. Ensure the application circuit accounts for the internal source inductance of 7.5 nH during fast switching transitions to prevent voltage overshoot.
Part Context
This part belongs to Nexperia's BUK9 series of N-channel TrenchMOS FETs. These devices utilize advanced trench technology to achieve low RDS(on) within the D2PAK form factor. The series is specifically engineered to meet automotive reliability standards while maintaining compatibility with standard logic-level drivers.
Replacement Considerations
Direct replacements must match the 60 V rating, D2PAK (SOT404) package, and similar RDS(on) characteristics. Verify that any substitute also holds AEC-Q101 qualification if used in automotive contexts. Check pinout compatibility and thermal resistance values to ensure equivalent heat dissipation performance.
