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Product Detailed Parameters
- Description：MOSFET N-CH 100V 75A D2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：14.4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：8600 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：230W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BUK9615-100A,118 is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a D2PAK (SOT404) plastic package. Designed for automotive critical applications, it complies with AEC-Q101 standards. Key electrical parameters include a drain-source voltage of 100 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device exhibits low on-state resistance, typically 11.5 mΩ at VGS=10V and 12 mΩ at VGS=5V. It supports a total power dissipation of 230 W and operates within a junction temperature range of -55 °C to +175 °C.
Feature Summary
- Compliant with AEC-Q101 automotive qualification standards for critical applications
- Logic level gate drive capability enabling efficient switching with low gate-source voltages
- Low on-state resistance resulting in reduced conduction losses
- Robust avalanche ruggedness rated at 120 mJ under specified unclamped inductive load conditions
Applications
- Automotive power switching circuits
- General purpose power switching
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component when designing circuits requiring logic-level gate drive compatibility alongside high current handling capabilities. The D2PAK package provides a thermal path through the mounting base, necessitating adequate heatsinking or PCB copper area to manage the 230 W power dissipation rating effectively. Ensure gate drive voltages align with the specified threshold characteristics for optimal RDS(on) performance.
Part Context
This part belongs to Nexperia's BUK96 series of N-channel TrenchMOS logic level FETs. The series is engineered for automotive environments, offering a balance of low static resistance and robust dynamic performance. The D2PAK package variant provides a cost-effective surface-mount solution for medium-to-high power applications where thermal management via the exposed drain tab is feasible.
Replacement Considerations
Check datasheet specifications for direct pin-compatible alternatives within the same family, such as the BUK9515-100A, ensuring voltage, current, and thermal ratings meet or exceed the original design requirements.
