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Product Detailed Parameters
- Description：MOSFET N-CH 30V 120A D2PAK
- Series：TrenchMOS™
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：1.4mOhm @ 25A, 5V
- Vgs(th) (Max) @ Id：2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：113 nC @ 5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：16150 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：357W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BUK961R4-30E is a logic level N-channel MOSFET utilizing TrenchMOS technology in a SOT404 (D2PAK) package. Designed for high-performance automotive applications, it complies with the AEC-Q101 standard. Key electrical parameters include a drain-source voltage of 30 V and a continuous drain current of 120 A at a mounting base temperature of 25 °C. The device features a maximum total power dissipation of 357 W under the same conditions. It supports an extended junction temperature range up to 175 °C and includes repetitive avalanche rating capabilities.
Feature Summary
- Compliant with AEC-Q101 standards for automotive reliability
- Capable of operating in thermally demanding environments with a 175 °C rating
- Features true logic level gate operation with threshold voltage greater than 0.5V at 175 °C
- Rated for repetitive avalanche energy
Applications
- 12 V Automotive systems
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify component authenticity through authorized Nexperia channels, as the former NXP Standard Product business transitioned to Nexperia. Confirm that the specific ordering suffix matches the required package variant. Ensure design compliance with absolute maximum ratings to prevent irreversible damage. Review the latest product data sheet for any specification updates or changes since the original publication date.
Selection Notes
Select this component for designs requiring robust automotive-grade N-channel switching with high current handling capabilities. The D2PAK package offers efficient thermal management suitable for power-intensive applications. Consider the low on-state resistance and fast switching characteristics when evaluating efficiency requirements. Ensure the gate drive circuitry aligns with the specified logic level thresholds for optimal performance across the full temperature range.
Part Context
This device belongs to the N-channel TrenchMOS logic level FET family. It represents a transition from NXP Semiconductors to Nexperia B.V., which now manages this product line. The technology focuses on delivering high performance in discrete, logic, and power semiconductor markets, specifically targeting automotive, industrial, computing, consumer, and wearable application segments.
Replacement Considerations
Consult official Nexperia documentation for verified substitute part numbers. Cross-reference pin configurations and electrical specifications carefully before implementation.
