BUK962R5-60E,118

$2.97

Description：MOSFET N-CH 60V 120A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:4d44b8e18fba Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 120A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：2.5mOhm @ 25A, 5V
Vgs(th) (Max) @ Id：2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：120 nC @ 5 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：17450 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：357W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Download product information

BUK962R5-60E,118

Overview

The BUK962R5-60E is a logic level N-channel MOSFET utilizing TrenchMOS technology in a D2PAK (SOT404) package. It features a drain-source voltage of 60 V and a continuous drain current of 120 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 2 mΩ at VGS = 5 V and ID = 25 A. Total power dissipation reaches 349 W under specified conditions. It supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.

Feature Summary

AEC-Q101 compliant for automotive applications
True logic level gate with threshold voltage greater than 0.5V at 175 °C
Repetitive avalanche rated for rugged operation
Suitable for thermally demanding environments due to 175 °C rating

Applications

12 V Automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration before procurement. Confirm that the component status remains active as product lifecycles may change. Ensure design reviews account for the absolute maximum ratings provided in the datasheet to prevent device stress. Cross-reference the marking code BUK962R5-60E for physical identification during assembly inspection processes.

Selection Notes

Select this component when low gate drive voltage compatibility is required alongside high current handling. The logic level gate ensures efficient switching with standard 5 V drivers. Consider the thermal resistance characteristics for heat sink design in high-power scenarios. Verify that the package footprint aligns with the PCB layout constraints for the SOT404 outline.

Part Context

This part belongs to Nexperia's TrenchMOS family of N-channel enhancement mode field-effect transistors. It is designed specifically for high-performance automotive applications requiring robust reliability. The D2PAK package provides a balance between power handling capability and surface-mount convenience for automated assembly processes.