BUK9635-100A,118

Description：MOSFET N-CH 100V 41A D2PAK
Series：TrenchMOS™
Mfr：NXP USA Inc.
Package：Tape & Reel (TR)

SKU:627eeaeddcd9 Category: Single FETs, MOSFETs Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 41A D2PAK
Series：TrenchMOS™
Mfr：NXP USA Inc.
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：41A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：34mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：3573 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：149W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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BUK9635-100A,118

Overview

The BUK9635-100A is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology. It features a drain-source voltage of 100 V and a continuous drain current of 41 A at 25 °C mounting base temperature. The device operates with a junction temperature range from -55 °C to +175 °C. Total power dissipation reaches 149 W at 25 °C. The package type is D2PAK (SOT404).

Feature Summary

Compliant with the AEC Q101 standard for automotive critical applications.
Designed for logic level gate drive sources.
Suitable for thermally demanding environments due to high temperature rating.

Applications

12 V, 24 V and 42 V loads
Automotive and general purpose power switching
Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix matches the required package variant. Confirm that the component meets the AEC-Q101 qualification requirements for your target application. Ensure the design accounts for the thermal resistance characteristics provided in the datasheet to maintain safe operating temperatures under load conditions.

Selection Notes

Select this component when a robust N-channel MOSFET capable of handling high currents in automotive environments is required. The logic level gate drive capability simplifies control circuitry design. Consider the thermal management requirements associated with the D2PAK package for optimal performance.

Part Context

This part belongs to the BUK9635 series of N-channel TrenchMOS logic level FETs manufactured by NXP Semiconductors. The series is designed for use in automotive critical applications, offering low conduction losses and suitability for various power switching tasks.