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The BUK963R1-40E is a logic level N-channel MOSFET utilizing TrenchMOS technology in a SOT404 (D2PAK) package. Designed for high-performance automotive applications, it meets AEC-Q101 standards. Key electrical parameters include a drain-source voltage of 40 V and a continuous drain current of 100 A at 25 °C mounting base temperature. The device features a typical on-state resistance of 2.6 mΩ at VGS = 5 V and ID = 25 A. It supports junction temperatures up to 175 °C with a total power dissipation of 234 W. Dynamic characteristics include a total gate charge of 69.5 nC and repetitive avalanche rating capability.
Verify the specific ordering suffix against official Nexperia documentation to confirm package variant and tape/reel specifications. Ensure compliance with RoHS and REACH regulations as stated in the product data sheet. Confirm that the SOT404 footprint matches the design requirements. Check for any recent Product Change Notices regarding labeling or manufacturing location updates before finalizing procurement.
Select this component for applications requiring low on-state resistance at logic-level gate drives. The 40 V rating suits 12 V automotive networks. Verify thermal management capabilities given the 175 °C junction limit. Consider the repetitive avalanche energy rating for inductive load switching. Ensure the driver can provide sufficient gate voltage to minimize RDS(on).
This part belongs to the BUK96 series of N-channel TrenchMOS logic level FETs from Nexperia. These devices are engineered for automotive-grade performance, combining low conduction losses with high thermal stability. The SOT404 package provides efficient heat dissipation through a dedicated mounting base connected to the drain terminal.
Consult Nexperia's official cross-reference tools for verified substitutes. Ensure replacement parts match the 40 V rating, 100 A current capacity, and SOT404 package dimensions. Verify AEC-Q101 qualification if automotive use is required.
The absolute maximum gate-source voltage is ±15 V for lifetime ratings and ±10 V for standard conditions.
Yes, the device is rated for junction temperatures up to 175 °C and is designed for thermally demanding environments.
The BUK963R1-40E uses TrenchMOS technology to achieve low on-state resistance and improved switching performance.