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Product Detailed Parameters
- Description：MOSFET N-CH 100V 39A D2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：39A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：39mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：48 nC @ 5 V
- Vgs (Max)：±15V
- Input Capacitance (Ciss) (Max) @ Vds：3072 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：158W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BUK9640-100A is an N-channel TrenchMOS logic level FET designed for automotive and general-purpose power switching. It features a drain-source voltage of 100 V, a continuous drain current of 39 A at 25 °C mounting base temperature, and a total power dissipation of 158 W. The device exhibits low on-state resistance, with typical values of 29 mΩ at VGS = 10 V and 34 mΩ at VGS = 5 V (both at ID = 25 A, Tj = 25 °C). It supports junction temperatures up to 175 °C and includes avalanche ruggedness rated at 182 mJ.
Feature Summary
- Logic level gate drive compatibility
- Automotive qualification compliant with Q101 standards
- High thermal stability suitable for demanding environments
Applications
- 12 V, 24 V, and 42 V load switching
- Automotive power management systems
- Motor, lamp, and solenoid control circuits
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm package type and reel specifications. Ensure the component meets the required AEC-Q101 automotive reliability standards for your target application environment. Cross-reference the datasheet revision date with your design requirements to confirm parameter consistency.
Selection Notes
Select this component for applications requiring robust N-channel switching with low conduction losses. The logic level gate drive capability allows direct interfacing with standard microcontrollers or drivers without additional level shifting. Consider the 175 °C junction rating for high-temperature operational environments where thermal management is critical.
Part Context
This part belongs to Nexperia's NextPower S1 series of N-channel MOSFETs utilizing TrenchMOS technology. It is housed in a D2PAK (SOT404) plastic surface-mounted package. The device is specifically engineered to balance low RDS(on) with high power density, making it suitable for space-constrained automotive designs.
Replacement Considerations
Direct substitutes include other Nexperia parts within the BUK96xx-100A family, such as the BUK9240-100A, provided pinout and electrical parameters align with the system design requirements.
