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The BUK964R1-40E is an N-channel TrenchMOS logic level FET in a SOT404 (D2PAK) package. It features a drain-source voltage of 40 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device has a maximum total power dissipation of 182 W. Static characteristics include a typical RDSon of 3.4 mΩ at VGS=5V, ID=25A, and 25°C. Dynamic parameters show a typical total gate charge of 52.1 nC and gate-drain charge of 18.8 nC. Thermal resistance from junction to mounting base is typically 0.82 K/W.
Verify the specific ordering suffix matches the required tape-and-reel quantity or packaging variant. Confirm the component status as production data sheet information before initiating design. Ensure the selected package version aligns with the PCB footprint requirements for the SOT404 outline. Check for any recent updates to the product specification on the manufacturer website.
Select this component when low gate drive voltage compatibility is required alongside high current handling. The logic level gate ensures full enhancement at standard logic levels. Consider the thermal resistance and power dissipation limits for the specific mounting base temperature conditions. Verify that the avalanche energy rating meets the circuit's transient requirements.
This part belongs to the Nexperia BUK964R1-40E series of N-channel TrenchMOS logic level FETs. It utilizes advanced TrenchMOS technology to achieve low on-state resistance within the D2PAK plastic surface-mounted package. The series is designed for high-performance automotive applications requiring robust reliability and thermal stability.
Check for direct pin-compatible alternatives within the same Nexperia BUK964R1-40E family that may offer updated packaging or slight parameter variations. Ensure any substitute maintains the AEC-Q101 qualification if automotive use is intended. Verify that the replacement part meets the same 40 V and 75 A specifications.