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The BUK964R7-80E is an N-channel TrenchMOS logic level FET in a D2PAK (SOT404) package. It features a drain-source voltage of 80 V and a continuous drain current of 120 A at 25 °C mounting base temperature. The device has a maximum on-state resistance of 4.7 mΩ at VGS = 5 V and ID = 25 A. Total power dissipation reaches 324 W under specified conditions. It supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.
Verify the specific ordering suffix matches the required packaging configuration before procurement. Confirm that the component meets the necessary AEC-Q101 qualification standards for the intended automotive application environment. Ensure thermal management designs account for the specified junction-to-mounting base thermal resistance values provided in the datasheet.
Select this component when low gate drive voltage compatibility is required alongside high current handling capabilities. The logic level gate threshold ensures efficient switching with standard logic drivers. Consider the D2PAK package size for PCB space constraints and verify that the mounting base thermal interface can support the required heat dissipation levels for the specific duty cycle.
This part belongs to Nexperia's TrenchMOS family, utilizing advanced trench technology to achieve low on-state resistance. The SOT404 package provides a single-ended surface-mounted solution with a dedicated mounting base connected to the drain for improved thermal performance compared to standard leaded packages.
BUK964R7-80E,118