BUK98150-55,135

Overview

The BUK98150-55 is an N-channel TrenchMOS logic level FET designed for automotive and general-purpose power switching. It features a drain-source voltage (VDS) of 55 V and a continuous drain current (ID) of 5.5 A at 25 °C. The device exhibits a maximum on-state resistance (RDSon) of 150 mΩ at VGS = 5 V and ID = 5 A. Total power dissipation reaches 8.3 W at 25 °C. It operates within a junction temperature range of -55 °C to 150 °C and is housed in a SOT223 package.

Feature Summary

• AEC-Q101 compliant for automotive critical applications
• Integrated protection diodes provide electrostatic robustness
• Low conduction losses enabled by low on-state resistance

Applications

• Automotive power switching
• General purpose power switching

Procurement Notes

Verify the manufacturer designation, as the business was rebranded to Nexperia in February 2017. Confirm that the specific ordering suffix matches the required packaging version. Ensure the component meets the AEC-Q101 qualification standards required for your target application environment before finalizing procurement.

Selection Notes

Select this component when a logic-level gate drive is required for efficient switching at 5 V. The SOT223 package provides increased heatsink capabilities suitable for moderate power dissipation. Verify that the 55 V rating aligns with the system's maximum operating voltage and that the thermal management design supports the specified power dissipation limits.

Part Context

This part belongs to the BUK98150 series of N-channel enhancement mode Field-Effect Transistors. Utilizing TrenchMOS technology, it offers improved performance over standard MOSFETs. The product line is specifically engineered to meet the rigorous reliability and quality standards demanded by the automotive industry while maintaining cost-effectiveness for industrial applications.

Replacement Considerations

BUK98150-55/CU