BUK9880-55,135

Overview

The BUK9880-55,135 is an N-channel TrenchMOS logic level FET manufactured by Nexperia USA Inc. It features a 55 V drain-source voltage rating and supports a continuous drain current of 7.5 A at 25 °C case temperature. The device exhibits a maximum on-state resistance of 80 mΩ at VGS = 5 V and ID = 5 A. Total power dissipation reaches 8.3 W under specified conditions. Packaged in a SOT-223 (SC-73) surface-mount housing with four leads, it includes integrated protection diodes for electrostatic robustness.

Feature Summary

• AEC-Q101 compliant for automotive critical applications
• Electrostatically robust due to integrated protection diodes
• Low conduction losses resulting from low on-state resistance

Applications

• Automotive power switching
• General purpose power switching

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm package variant and marking code accuracy. Confirm RoHS compliance status and REACH registration details prior to integration. Ensure design margins respect absolute maximum ratings for junction temperature and avalanche energy limits during operation.

Selection Notes

Select this component when designing circuits requiring logic-level gate drive compatibility with standard 5 V control signals. The SOT-223 package provides enhanced thermal performance compared to smaller footprints, suitable for moderate power dissipation requirements. Verify that the application environment meets the specified operating temperature range and humidity sensitivity classifications.

Part Context

This part belongs to the BUK9880 series of N-channel enhancement mode Field-Effect Transistors utilizing TrenchMOS technology. The series is engineered for high-efficiency switching applications where low on-resistance and robust automotive qualification are required. The device integrates internal structures to improve reliability in harsh electrical environments.

Replacement Considerations

BUK9880-55/CU