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Product Detailed Parameters
- Description：MOSFET N-CH 55V 75A TO220-5
- Series：TrenchMOS™
- Mfr：NXP USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6.2mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：108 nC @ 5 V
- Vgs (Max)：±15V
- Input Capacitance (Ciss) (Max) @ Vds：5836 pF @ 25 V
- FET Feature：Temperature Sensing Diode
- Power Dissipation (Max)：272W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-5
- Package / Case：TO-220-5
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Overview
The BUK9907-55ATE is an N-channel TrenchPLUS logic level Field-Effect Transistor (FET) utilizing TrenchMOS technology. Designed for automotive critical applications, it features integrated ElectroStatic Discharge (ESD) protection diodes and a temperature sensor. The device operates with a drain-source voltage of 55 V and supports continuous drain currents up to 140 A at 25 °C mounting base temperature. It exhibits low on-state resistance, typically 6.2 mΩ at VGS = 10V and ID = 50A. The component is housed in a TO-220 plastic single-ended package (SOT263B) with five leads.
Feature Summary
- Integrated temperature sensing capability for responsive thermal monitoring
- Built-in ESD protection diodes for electrostatic robustness
- Logic level gate drive compatibility for efficient switching
- Low conduction losses resulting from minimized on-state resistance
Applications
- 12 V and 24 V high power motor drives
- Automotive and general purpose power switching
- Electrical Power Assisted Steering (EPAS)
- Protected drive for lamps
Procurement Notes
Verify the current product status as the original NXP Standard Product business transitioned to Nexperia. Confirm that datasheet references to NXP or Philips Semiconductors are updated to Nexperia. Ensure compliance with the specific AEC-Q101 qualification requirements relevant to your application environment before finalizing procurement decisions.
Selection Notes
Select this component for designs requiring high current handling in automotive environments. Consider the TO-220 package constraints for thermal management, as power dissipation is limited by the mounting base temperature. Verify that the logic level gate drive meets the control circuit requirements for optimal on-state resistance performance.
Part Context
This part belongs to the N-channel enhancement mode FET family using TrenchMOS technology. It is specifically engineered for automotive reliability, meeting AEC standards. The integration of ESD protection and temperature sensing distinguishes it from standard discrete MOSFETs, offering enhanced functionality within a single package for complex power management systems.
Replacement Considerations
Consult official Nexperia documentation for direct substitutes. Verify pinout compatibility and thermal characteristics when considering alternative packages. Ensure any replacement maintains the required AEC-Q101 qualification and electrical specifications for automotive safety applications.
