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Product Detailed Parameters
- Description：MOSFET N-CH 55V 75A D2PAK-7
- Series：TrenchPLUS
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：9mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：51 nC @ 5 V
- Vgs (Max)：±15V
- Input Capacitance (Ciss) (Max) @ Vds：4667 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：194W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK-7
- Package / Case：TO-263-7, D2PAK (6 Leads + Tab)
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Overview
The BUK9C10-55BIT is a logic level N-channel MOSFET utilizing TrenchPLUS technology in a D2PAK-7 (SOT427) package. It features integrated current sensing and temperature monitoring diodes, designed for automotive applications under AEC-Q101 standards. Key electrical parameters include a drain-source breakdown voltage of 55 V, a maximum on-state resistance of 10 mΩ at VGS=5V, and continuous drain current up to 75 A. The device supports junction temperatures up to 175 °C with an ID/Isense ratio of approximately 11000 A/A.
Feature Summary
- Integrated current sense FET enables precise drain current measurement via dedicated pin
- Built-in temperature sense diode allows direct thermal monitoring without external sensors
- AEC-Q101 qualified for high reliability in demanding automotive environments
- TrenchPLUS technology ensures low conduction losses and robust performance
Applications
- 12 V Automotive systems
- Motors, lamps and solenoid control
- Powertrain, chassis and body applications
Procurement Notes
Verify the specific suffix '11' against official Nexperia ordering lists, as datasheets may not detail packaging variations. Confirm the D2PAK-7 package type and AEC-Q101 compliance status directly with the manufacturer or authorized distributors before finalizing procurement specifications.
Selection Notes
Select this component when integrated thermal and current monitoring are required within a single power switch. The logic-level gate drive compatibility simplifies control circuitry design. Ensure the application operates within the 55 V drain-source voltage limit and utilizes the Kelvin source pin for accurate RDS(on) characterization.
Part Context
This part belongs to Nexperia's BUK9C series of N-channel TrenchPLUS logic level FETs. The series is characterized by advanced trench MOSFET technology optimized for automotive-grade reliability. These devices integrate auxiliary functions like current sensing and temperature detection, distinguishing them from standard discrete power MOSFETs.
Replacement Considerations
Direct substitutes must match the 55 V rating, D2PAK-7 package, and integrated sensing features. Verify that alternative parts meet AEC-Q101 requirements and possess comparable on-state resistance and thermal characteristics.
